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PSRAM / CELLULAR RAM ICNew
DRAM_007
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Description
CHARACTERSTICS OF PSRAM / CELLULAR RAM :-
PSRAM is a device that features an SDRAM like Architecture,Hidden
Refresh Operation and SRAM Pin compatibility.
● This hybrid memory delivers the best of SRAM and DRAM Features,
Combining low power consumption and high speed Read and Write
Functions.
● Because CellularRAM memory also offers synchronous operations, fast
access, and variable latency initial burst access, you get high throughput
and excellent performance. It's an ideal solution for low-power, spacelimited
designs like MCPs, as well as mobile and industrial applications.
● Micron's PSRAM comes in different Packages,Density,Depth,Width type :-
● Density :- 4Mb,8Mb,16Mb,32Mb,64Mb,128Mb.
● Depth :- 256k,512k,1Mb,2Mb,4Mb,8Mb.
● Width :- x16.
● Voltage :- 1.7V - 3.6V.
● Package :- VFBGA.
● Pin Count :- 48 Ball and 54Ball.
PSRAM is a device that features an SDRAM like Architecture,Hidden
Refresh Operation and SRAM Pin compatibility.
● This hybrid memory delivers the best of SRAM and DRAM Features,
Combining low power consumption and high speed Read and Write
Functions.
● Because CellularRAM memory also offers synchronous operations, fast
access, and variable latency initial burst access, you get high throughput
and excellent performance. It's an ideal solution for low-power, spacelimited
designs like MCPs, as well as mobile and industrial applications.
● Micron's PSRAM comes in different Packages,Density,Depth,Width type :-
● Density :- 4Mb,8Mb,16Mb,32Mb,64Mb,128Mb.
● Depth :- 256k,512k,1Mb,2Mb,4Mb,8Mb.
● Width :- x16.
● Voltage :- 1.7V - 3.6V.
● Package :- VFBGA.
● Pin Count :- 48 Ball and 54Ball.
Features
BENIFITS :-
A range of densities, provides flexibility for many designs.
Available in x16 word sizes with selectable bytes and burst lengths.
A single device that can operate over an extended Vccq range.
Offers extremely low power dissipation in standby and active modes; PAR in standby mode provides even greater power savings.
Wide temperature ranges are ideal for rugged mobile and industrial environments.
Perfect for space-limited mobile applications.
A range of densities, provides flexibility for many designs.
Available in x16 word sizes with selectable bytes and burst lengths.
A single device that can operate over an extended Vccq range.
Offers extremely low power dissipation in standby and active modes; PAR in standby mode provides even greater power savings.
Wide temperature ranges are ideal for rugged mobile and industrial environments.
Perfect for space-limited mobile applications.
Specification
PART NO. DENSITY DEPTH WIDTH VOLTAGE PACKAGE
MT45W1MW16BDGB-701 IT 16Mb 1Mb x16 1.7V-1.95V VFBGA
MT45W1MW16BDGB-708 AT 16Mb 1Mb x16 1.7V-3.3V VFBGA
MT45W1MW16PDGA-70 IT 16Mb 1Mb x16 1.7V-3.3V VFBGA
MT45W2MW16BGB-701 IT 32Mb 2Mb x16 1.7V-3.6V VFBGA
MT45W2MW16BGB-708 AT 32Mb 2Mb x16 1.7V-3.3V VFBGA
MT45W2MW16PGA-70 IT 32Mb 2Mb x16 1.7V-3.6V VFBGA
MT45W4MW16BCGB-701 IT 64Mb 4Mb x16 1.7V-3.3V VFBGA
MT45W4MW16PCGA-70 IT 64Mb 4Mb x16 1.7V-3.3V VFBGA
MT45W4MW16PCGA-70 L WT 64Mb 4Mb x16 1.7V-3.3V VFBGA
MT45W8MW16BGX-701 IT 128Mb 8Mb x16 1.7V-3.6V VFBGA
MT45W8MW16BGX-856 AT 128Mb 8Mb x16 1.7V-3.6V VFBGA
MT45W1MW16BDGB-701 IT 16Mb 1Mb x16 1.7V-1.95V VFBGA
MT45W1MW16BDGB-708 AT 16Mb 1Mb x16 1.7V-3.3V VFBGA
MT45W1MW16PDGA-70 IT 16Mb 1Mb x16 1.7V-3.3V VFBGA
MT45W2MW16BGB-701 IT 32Mb 2Mb x16 1.7V-3.6V VFBGA
MT45W2MW16BGB-708 AT 32Mb 2Mb x16 1.7V-3.3V VFBGA
MT45W2MW16PGA-70 IT 32Mb 2Mb x16 1.7V-3.6V VFBGA
MT45W4MW16BCGB-701 IT 64Mb 4Mb x16 1.7V-3.3V VFBGA
MT45W4MW16PCGA-70 IT 64Mb 4Mb x16 1.7V-3.3V VFBGA
MT45W4MW16PCGA-70 L WT 64Mb 4Mb x16 1.7V-3.3V VFBGA
MT45W8MW16BGX-701 IT 128Mb 8Mb x16 1.7V-3.6V VFBGA
MT45W8MW16BGX-856 AT 128Mb 8Mb x16 1.7V-3.6V VFBGA
Safety/Quality Approvals
CellularRAM® memory is a pseudo-static DRAM (PSRAM) device that features an SRAM-like architecture, hidden refresh operation, and SRAM pin-compatibility. This hybrid memory delivers the best of SRAM and DRAM features, combining low power consumption and high-speed read and write functions. Because CellularRAM memory also offers synchronous operations, fast access, and variable latency initial burst access, you get high throughput and excellent performance. It's an ideal solution for low-power, space-limited designs like MCPs, as well as mobile and industrial applications.
Other 1
WE CAN PROVIDE YOU BELOW LISTED COMPONENTS OF MAKE - MICRON AT A VERY COMPETITIVE PRICE.KINDLY CHECK THE AVAILIBILTY OF PARTS BEFORE ORDERING.
Country of Origin
IDAHO , U.S.A.
Main Export Markets
WORLDWIDE
Payment Details
Payment Terms : ADVANCE T/T ONLY.Minimum Order : 1000 UnitsOthers : 100% ADVANCE T/T AND WE ONLY DEALS IN U.S.D WITH EX-WORKS IN SINGAPORE / HONGKONG.
Delivery Details
Lead Time : 10 - 12 WORKING DaysFOB Port : SINGAPORE / HONGKONGOthers : WE SHIP FROM SINGAPORE PORT / HONGKONG AS PER THE INVENTORY AND DETAILS GIVEN IN P.O. AND WE ARE HAVING STANDARD FACTORY PACKING MATERIAL WITH US.
About Us
We Are At Om NanoTech Pvt Ltd- A Micron Hub in India , Please to Introduce Ourself As :
We are wholly owned subsidiary of Om Associates Pte. Ltd., Singapore. Om Associates is one of the largest and most renowned name in DRAM and FLASH, enjoying a close relationship with MICRON, USA- World Leader in Memory . Om Associates has it offices and associates in many countries around the world.
We in India, are the largest manufacturer of Computer Memory and USB Drives having global client base.
Due to our high volume manufacturing and trading, we can offer DRAM,SDRAM,SRAM and FLASH Chips at most competitive rates and in many cases ex-stock in India/Singpore/HK/Taiwan/USA.
We also have an Engineering team that is backed by Micron to assist in product selection, usage and application.
INDUSTRIAL MEMORY CHIPS:
SDR chips: 4x16/8x16/16x16/2x32/4x32/8x32.
DDR chips: 8x16/16x16.
DDR2 chips: 16x16/32x16.
Regular memory chips for Module making
MCPs And CMOS Sensor
FLASH:
You may also please consider us for :
NAND and NOR Flash Chips :NAND Flash,e-MMC,High Speed NAND,Serial NAND,BA NAND, Enterprise NAND Etc.
RAM: DDR-I, DDR-II, SDRAM (From OEM and Major Brands).
PEN DRIVES: USB Drive - 256MB, 512MB, 1GB, 2GB, 4GB, 8GB (From OEM Brand).
FLASH MEMORY: CF Card, Smart Media Card, Multimedia Card, Memory Stick, USB Device, MP3 Player, Digital Cameras and many more (Available in Bulk / Retail Packing).
For more information on our Company and our Company's Products, please visit our website www.om-nanotech.com.
We shall be glad to provide further information as per your requirements.
With best wishes
Manish Tiwari
Sr. Executive-Marketing
Om Nanotech Private Limited
(An ISO 9001:2008 Certified Co.)
SDF, E-3, 4, 19 & 20, N.S.E.Z.,
Noida - 201305 (U.P.), INDIA.
Tel. : 0120-2460008, 4213448 Extn: 29
Mobile : 09582200360
Fax : +91-120-2460007
Website: www.om-nanotech.com
Blog :- http://microncomponents.blogspot.in/
Presentation :- http://www.slideshare.net/omnanotech2012/microns-product-range?from=share_email
Established Date: 2002/12/5
No. of Employees: 50 Persons
Business Type: Distributor
Main Products
SDRAM IC / DDR SDRAM / DDR-2 SDRAM / DDR-3 SDRAM / RLDRAM / MOBILE LPDRAM / PSRAM/ NAND FALSH / NOR FLASH / SSD / MCP /PCM AND MEMORY MODULES.