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DDR-2 SDRAM ICNew
DRAM_003
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Description
Characteristics of DDR2 SDRAM :-
1.The double pumping data bus in DDR SDRAM,it allows higher bus speed and requires low power by running the internal clock at half the speed of data bus.
2.A wide array of capabilities makes our DDR2 an excellent memory choice for the diverse needs of many applications—from automotive and industrial to server, consumer, networking, and computing.
3.Micron's DDR2 SDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 512Mb,1GB,256Mb,2GB,4GB.
5.Depth :- 16Mb,32mb,64Mb,128Mb and 256Mb and 512Mb.
6.Width :- x4, x8 , x16.
7.Voltage :- 1.5V and 1.8V.
8.Package :- FBGA and V-FBGA
9.Pin Configuration :- 84Pin and 84 Bal, 60Ball, 63 Ball.
1.The double pumping data bus in DDR SDRAM,it allows higher bus speed and requires low power by running the internal clock at half the speed of data bus.
2.A wide array of capabilities makes our DDR2 an excellent memory choice for the diverse needs of many applications—from automotive and industrial to server, consumer, networking, and computing.
3.Micron's DDR2 SDRAM comes in different Packages,Density,Depth,Width type :-
4.Density :- 512Mb,1GB,256Mb,2GB,4GB.
5.Depth :- 16Mb,32mb,64Mb,128Mb and 256Mb and 512Mb.
6.Width :- x4, x8 , x16.
7.Voltage :- 1.5V and 1.8V.
8.Package :- FBGA and V-FBGA
9.Pin Configuration :- 84Pin and 84 Bal, 60Ball, 63 Ball.
Features
BENIFITS :-
Enables better electrical performance and speed.
Reduces memory system power demand.
High-density components enable large memory subsystems.
1Gb and higher DDR2 devices have 8 banks for better performance.
Provides reduced core speed dependency for better yields.
Provides migration path for higher bus speeds.
Eliminating one-half clock settings helps speed internal DRAM logic and improves yield
ODT for both memory and controller improves signaling and reduces system cost.
Differential or single-ended data strobes improve system timing margin by reducing strobe crosstalk.
Extended operating ranges for optimum functionality in extreme environments.
Enables better electrical performance and speed.
Reduces memory system power demand.
High-density components enable large memory subsystems.
1Gb and higher DDR2 devices have 8 banks for better performance.
Provides reduced core speed dependency for better yields.
Provides migration path for higher bus speeds.
Eliminating one-half clock settings helps speed internal DRAM logic and improves yield
ODT for both memory and controller improves signaling and reduces system cost.
Differential or single-ended data strobes improve system timing margin by reducing strobe crosstalk.
Extended operating ranges for optimum functionality in extreme environments.
Specification
PART NO. DENSITY DEPTH WIDTH VOLTAGE PACKAGE
MT47H128M16PK-25E IT 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-187E 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E AAT 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E AIT 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E IT 2Gb 128Mb x16 1.8V FBGA
MT47H128M4CF-25E 512Mb 128Mb x4 1.8V FBGA
MT47H128M8CF-187E 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-25 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-25E 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-25E IT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 AIT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 AT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 IT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 L 1Gb 128Mb x8 1.8V FBGA
MT47H128M8JN-3 1Gb 128Mb x8 1.8V FBGA
MT47H128M8JN-3 IT 1Gb 128Mb x8 1.8V FBGA
MT47H1G4WTR-25E 4Gb 1Gb x4 1.8V FBGA
MT47H1G4WTR-25E IT 4Gb 1Gb x4 1.8V FBGA
MT47H256M4CF-25E 1Gb 256Mb x4 1.8V FBGA
MT47H256M4CF-3 1Gb 256Mb x4 1.8V FBGA
MT47H256M8EB-187E 2Gb 256Mb x8 1.8V FBGA
MT47H256M8EB-25E 2Gb 256Mb x8 1.8V FBGA
MT47H256M8EB-25E IT 2Gb 256Mb x8 1.8V FBGA
MT47H256M8EB-3 2Gb 256Mb x8 1.8V FBGA
MT47H256M8THN-3 2Gb 256Mb x8 1.8V FBGA
MT47H32M16HR-187E 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E AAT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E AIT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E IT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E L 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E AAT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E AIT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E IT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16U67A3WC1 512Mb 32Mb x16 1.8V Wafer
MT47H512M4EB-187E 2Gb 512Mb x4 1.8V FBGA
MT47H512M4EB-25 2Gb 512Mb x4 1.8V FBGA
MT47H512M4EB-25E 2Gb 512Mb x4 1.8V FBGA
MT47H512M4EB-3 2Gb 512Mb x4 1.8V FBGA
MT47H512M4THN-25E 2Gb 512Mb x4 1.8V FBGA
MT47H512M4THN-3 2Gb 512Mb x4 1.8V FBGA
MT47H512M8WTR-25E 4Gb 512Mb x8 1.8V FBGA
MT47H512M8WTR-3 4Gb 512Mb x8 1.8V FBGA
MT47H64M16HR-187E 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25 IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E AAT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E AIT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E L 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 AAT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 AIT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 L 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HW-3 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HW-3 IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M8CF-25E 512Mb 64Mb x8 1.8V FBGA
MT47H64M8CF-25E AIT 512Mb 64Mb x8 1.8V FBGA
MT47H64M8CF-25E IT 512Mb 64Mb x8 1.8V FBGA
MT47H64M8CF-25E L 512Mb 64Mb x8 1.8V FBGA
MT47H64M8JN-25E 512Mb 64Mb x8 1.8V FBGA
MT47H64M8JN-25E IT 512Mb 64Mb x8 1.8V FBGA
MT47H64M8U67A3WC1 512Mb 64Mb x8 1.8V Wafer
MT47R128M8CF-3 1Gb 128Mb x8 1.55V FBGA
MT47R64M16HR-3 1Gb 64Mb x16 1.55V FBGA
MT47H128M16PK-25E IT 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-187E 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E AAT 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E AIT 2Gb 128Mb x16 1.8V FBGA
MT47H128M16RT-25E IT 2Gb 128Mb x16 1.8V FBGA
MT47H128M4CF-25E 512Mb 128Mb x4 1.8V FBGA
MT47H128M8CF-187E 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-25 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-25E 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-25E IT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 AIT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 AT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 IT 1Gb 128Mb x8 1.8V FBGA
MT47H128M8CF-3 L 1Gb 128Mb x8 1.8V FBGA
MT47H128M8JN-3 1Gb 128Mb x8 1.8V FBGA
MT47H128M8JN-3 IT 1Gb 128Mb x8 1.8V FBGA
MT47H1G4WTR-25E 4Gb 1Gb x4 1.8V FBGA
MT47H1G4WTR-25E IT 4Gb 1Gb x4 1.8V FBGA
MT47H256M4CF-25E 1Gb 256Mb x4 1.8V FBGA
MT47H256M4CF-3 1Gb 256Mb x4 1.8V FBGA
MT47H256M8EB-187E 2Gb 256Mb x8 1.8V FBGA
MT47H256M8EB-25E 2Gb 256Mb x8 1.8V FBGA
MT47H256M8EB-25E IT 2Gb 256Mb x8 1.8V FBGA
MT47H256M8EB-3 2Gb 256Mb x8 1.8V FBGA
MT47H256M8THN-3 2Gb 256Mb x8 1.8V FBGA
MT47H32M16HR-187E 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E AAT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E AIT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E IT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HR-25E L 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E AAT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E AIT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16HW-25E IT 512Mb 32Mb x16 1.8V FBGA
MT47H32M16U67A3WC1 512Mb 32Mb x16 1.8V Wafer
MT47H512M4EB-187E 2Gb 512Mb x4 1.8V FBGA
MT47H512M4EB-25 2Gb 512Mb x4 1.8V FBGA
MT47H512M4EB-25E 2Gb 512Mb x4 1.8V FBGA
MT47H512M4EB-3 2Gb 512Mb x4 1.8V FBGA
MT47H512M4THN-25E 2Gb 512Mb x4 1.8V FBGA
MT47H512M4THN-3 2Gb 512Mb x4 1.8V FBGA
MT47H512M8WTR-25E 4Gb 512Mb x8 1.8V FBGA
MT47H512M8WTR-3 4Gb 512Mb x8 1.8V FBGA
MT47H64M16HR-187E 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25 IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E AAT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E AIT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-25E L 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 AAT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 AIT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HR-3 L 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HW-3 1Gb 64Mb x16 1.8V FBGA
MT47H64M16HW-3 IT 1Gb 64Mb x16 1.8V FBGA
MT47H64M8CF-25E 512Mb 64Mb x8 1.8V FBGA
MT47H64M8CF-25E AIT 512Mb 64Mb x8 1.8V FBGA
MT47H64M8CF-25E IT 512Mb 64Mb x8 1.8V FBGA
MT47H64M8CF-25E L 512Mb 64Mb x8 1.8V FBGA
MT47H64M8JN-25E 512Mb 64Mb x8 1.8V FBGA
MT47H64M8JN-25E IT 512Mb 64Mb x8 1.8V FBGA
MT47H64M8U67A3WC1 512Mb 64Mb x8 1.8V Wafer
MT47R128M8CF-3 1Gb 128Mb x8 1.55V FBGA
MT47R64M16HR-3 1Gb 64Mb x16 1.55V FBGA
Safety/Quality Approvals
Next-generation, high-performance DDR3 pushes the envelope in key areas like power consumption, signaling speeds, and bandwidth and brings new levels of performance to desktop, notebook, and server computing applications. Below is a snapshot of how DDR3 stacks up against DDR2.
Other 1
WE CAN PROVIDE YOU BELOW LISTED COMPONENETS OF MAKE - MICRON AT A VERY COMPETITIVE PRICE.KINDLY CHECK THE AVAILIBILTY OF PARTS BEFORE ORDERING.
Country of Origin
IDAHO , U.S.A.
Main Export Markets
WORLDWIDE
Payment Details
Payment Terms : ADVANCE T/T ONLY.Minimum Order : 1000 UnitsOthers : 100% ADVANCE T/T AND WE ONLY DEALS IN U.S.D WITH EX-WORKS IN SINGAPORE / HONGKONG.
Delivery Details
Lead Time : 10 - 12 WORKING DaysFOB Port : SINGAPORE / HONGKONGOthers : WE SHIP FROM SINGAPORE PORT / HONGKONG AS PER THE INVENTORY AND DETAILS GIVEN IN P.O. AND WE ARE HAVING STANDARD FACTORY PACKING MATERIAL WITH US.
About Us
We Are At Om NanoTech Pvt Ltd- A Micron Hub in India , Please to Introduce Ourself As :
We are wholly owned subsidiary of Om Associates Pte. Ltd., Singapore. Om Associates is one of the largest and most renowned name in DRAM and FLASH, enjoying a close relationship with MICRON, USA- World Leader in Memory . Om Associates has it offices and associates in many countries around the world.
We in India, are the largest manufacturer of Computer Memory and USB Drives having global client base.
Due to our high volume manufacturing and trading, we can offer DRAM,SDRAM,SRAM and FLASH Chips at most competitive rates and in many cases ex-stock in India/Singpore/HK/Taiwan/USA.
We also have an Engineering team that is backed by Micron to assist in product selection, usage and application.
INDUSTRIAL MEMORY CHIPS:
SDR chips: 4x16/8x16/16x16/2x32/4x32/8x32.
DDR chips: 8x16/16x16.
DDR2 chips: 16x16/32x16.
Regular memory chips for Module making
MCPs And CMOS Sensor
FLASH:
You may also please consider us for :
NAND and NOR Flash Chips :NAND Flash,e-MMC,High Speed NAND,Serial NAND,BA NAND, Enterprise NAND Etc.
RAM: DDR-I, DDR-II, SDRAM (From OEM and Major Brands).
PEN DRIVES: USB Drive - 256MB, 512MB, 1GB, 2GB, 4GB, 8GB (From OEM Brand).
FLASH MEMORY: CF Card, Smart Media Card, Multimedia Card, Memory Stick, USB Device, MP3 Player, Digital Cameras and many more (Available in Bulk / Retail Packing).
For more information on our Company and our Company's Products, please visit our website www.om-nanotech.com.
We shall be glad to provide further information as per your requirements.
With best wishes
Manish Tiwari
Sr. Executive-Marketing
Om Nanotech Private Limited
(An ISO 9001:2008 Certified Co.)
SDF, E-3, 4, 19 & 20, N.S.E.Z.,
Noida - 201305 (U.P.), INDIA.
Tel. : 0120-2460008, 4213448 Extn: 29
Mobile : 09582200360
Fax : +91-120-2460007
Website: www.om-nanotech.com
Blog :- http://microncomponents.blogspot.in/
Presentation :- http://www.slideshare.net/omnanotech2012/microns-product-range?from=share_email
Established Date: 2002/12/5
No. of Employees: 50 Persons
Business Type: Distributor
Main Products
SDRAM IC / DDR SDRAM / DDR-2 SDRAM / DDR-3 SDRAM / RLDRAM / MOBILE LPDRAM / PSRAM/ NAND FALSH / NOR FLASH / SSD / MCP /PCM AND MEMORY MODULES.