Products
2Gb (16Mx8Banksx16) DDR3 SDRAM
H2A402G1666C
Inquire Now
Description
The H2A402G1666C is a high speed Double Date Rate 3 (DDR3) low voltage Synchronous DRAM fabricated with ultra high performance CMOS process containing 2,147,483,648 bits which organized as 16Mbits x 8 banks by 16 bits.
This synchronous device achieves high speed
double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
All of the control and address inputs
are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and /CK falling).
All I/Os are synchronized with a pair of bidirectional differential data strobes (DQS and /DQS) in a source synchronous fashion. The address bus is used to convey row, column and bank address information in
a /RAS and /CAS multiplexing style.
The 2Gb DDR3 devices operates with a single power supply:1.5V±0.075V VDD and VDDQ.
This synchronous device achieves high speed
double-data-rate transfer rates of up to 1866 Mb/sec/pin (DDR3-1866) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features:
- posted CAS with additive latency,
- write latency = read latency -1,
- On Die Termination,
- programmable driver strength data,
- seamless BL4 access with bank-grouping.
The 2Gb DDR3 devices operates with a single power supply:1.5V±0.075V VDD and VDDQ.
Features
- JEDEC Standard VDD/VDDQ = 1.5V±0.075V
- All inputs and outputs are compatible with SSTL_15 interface.
- Fully differential clock inputs (CK, /CK) operation.
- Eight Banks
- Posted CAS by programmable additive latency
- Bust length: 4 with Burst Chop (BC) and 8.
- CAS Write Latency (CWL): 5, 6, 7, 8
- CAS Latency (CL): 6, 7, 8, 9, 10, 11,13
- Write Latency (WL) =Read Latency (RL) -1.
- Bi-directional Differential Data Strobe (DQS).
- Data inputs on DQS centers when write.
- Data outputs on DQS, /DQS edges when read.
- On chip DLL align DQ, DQS and /DQS transition with CK transition.
- DM mask write data-in at the both rising and falling edges of the data strobe.
- Sequential & Interleaved Burst type available both for 8 & 4 with BC.
- Multi Purpose Register (MPR) for pre-defined pattern read out
- On Die Termination (ODT) options: Synchronous ODT, Dynamic ODT, and Asynchronous ODT
- Auto Refresh and Self Refresh
- Refresh Interval: 7.8us Tcase between -40°C ~ 85°C
Refresh Interval: 3.9us Tcase between 85°C ~ 95°C - RoHS Compliance
About Us
Hwaling Technology, headquartered in Taipei, Taiwan, stands as a pioneering force in the production of DRAM IC in Taiwan. Renowned for its commitment to innovation and the promotion of its proprietary brand, Axeme, HwaLing continuously explores new applications in DRAM and FLASH products. In an era where the convergence of Communication, Electronic Consumer, and Computing devices has become ubiquitous in the lives of consumers, Hwaling leverages its extensive experience in the memory field to deliver top-tier products and services.
Our product portfolio predominantly revolves around Flash Memory and Storage Products, encompassing Flash Memory Cards, DRAM Modules, and Semiconductor Components tailored for these products. Aligned with the ever-evolving landscape of consumer electronics, our offerings cater to an array of gadgets such as OTG Flash Drives, SSDs, UFDs, Mobile Phones, Tablets, Car Camcorders, TV Boxes, Routers, PDAs, Notebooks, PCs, Smartphones, and photo viewers, providing comprehensive solutions for diverse applications.
At Hwaling, we pride ourselves on our unwavering commitment to quality, driven by a passion for technological excellence. As we navigate the dynamic intersection of innovation and consumer demands, our focus remains steadfast on delivering cutting-edge products and solutions that elevate the user experience across a spectrum of devices. Embrace the future of memory technology with Hwaling, where innovation meets reliability, and your satisfaction is our priority.
Business Type: Manufacturer/OEM
Main Products
Memory IC, Memory Module, DRAM IC, Flash IC, eMMC, RAM, Low Power, DDR, Chip, Chip Component, Mirco SSD, Flash Memory, Flash Memory Card, DRAM Module, Semiconductor Component