Axeme - Hwaling Technology Co., Ltd.Taiwan

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Totally 78 products, showing the 1th - 10th items on page 1 / 8

8Gb (64Mx8Banks×16) DDR4 SDRAM

N6E08G16T

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x16 DRAM.

The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface ... (more)

8Gb (64Mx8Banks×16) DDR4 SDRAM

N6E08G16H

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x16 DRAM.

The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface ... (more)

4G-Bit 3.3V NAND FLASH MEMORY

H7A14G21A1CX

Offered in 512Mx8bit, the H7A14G21A1CX is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V VCC. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 400us on the (2K+64)Byte page a ... (more)

4G-Bit 3.3V NAND FLASH MEMORY

H7A14G21B1CN

The H7A14G21B1CN (4G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V ... (more)

8Gb (64Mx16Banks×8) DDR4 SDRAM

N6E08G08I

The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as sixteen-banks,2 bank group with 4 banks for each bankgroup for x8 DRAM.

The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface ... (more)

16Mb (512Kx2Banks×16) Synchronous SDRAM

H2A116M1633B

The H2A116M1633B is Synchronous Dynamic Random Access Memory (SDRAM) organized as 512K words x 2 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 16Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is d ... (more)

1G-Bit 3.3V NAND FLASH MEMORY

H7A11G24B9CN

The H7A11G24B9CN (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 2.7V to 3.6V ... (more)

1G-BIT 3.3V SPI-NAND FLASH MEMORY

H7A41G26B7CG

The H7A41G26B7CG (1G-bit) Serial SLC NAND Flash Memory provides a storage solution for systems with limited space, pins and power. The H7A41G26B7CG incorporates the popular SPI interface and the traditional large NAND non-volatile memory space. They are ideal for code shadowing to RAM, executing cod ... (more)

64Mb (1M×4Bank×16) Synchronous DRAM

H2A164M1633B

The H2A164M1633B is Synchronous Dynamic Random Access Memory (SDRAM) organized as 1Mega words x 4 banks by 16 bits. All inputs and outputs are synchronized with the positive edge of the clock.
The 64Mb SDRAM uses synchronized pipelined architecture to achieve high speed data transfer rates and is d ... (more)

1G-Bit 1.8V NAND FLASH MEMORY

H7A11G64B9CN

The H7A11G64B9CN (1G-bit) NAND Flash memory provides a storage solution for embedded systems with limited space, pins and power. It is ideal for code shadowing to RAM, solid state applications and storing media data such as,voice, video, text and photos. The device operates on a single 1.7V to 1.95V ... (more)

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